savantic semiconductor product specification silicon npn power transistors bdw83/83a/83b/83c/83d description with to-3pn package complement to type bdw84/84a/84b/84c/84d darlington high dc current gain applications for use in power linear and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit bdw83 45 bdw83a 60 BDW83B 80 bdw83c 100 v cbo collector-base voltage bdw83d open emitter 120 v bdw83 45 bdw83a 60 BDW83B 80 bdw83c 100 v ceo collector-emitter voltage bdw83d open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 0.5 a t c =25 150 p c collector power dissipation t a =25 3.5 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bdw83/83a/83b/83c/83d characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bdw83 45 bdw83a 60 BDW83B 80 bdw83c 100 v (br)ceo collector-emitter breakdown voltage bdw83d i c =30ma, i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =6a ,i b =12ma 2.5 v v cesat-2 collector-emitter saturation voltage i c =15a ,i b =150ma 4.0 v v be base-emitter on voltage i c =6a ; v ce =3v 2.5 v bdw83 v cb =45v, i e =0 t c =150 0.5 5.0 bdw83a v cb =60v, i e =0 t c =150 0.5 5.0 BDW83B v cb =80v, i e =0 t c =150 0.5 5.0 bdw83c v cb =100v, i e =0 t c =150 0.5 5.0 i cbo collector cut-off current bdw83d v cb =120v, i e =0 t c =150 0.5 5.0 ma bdw83 v ce =30v, i b =0 bdw83a v ce =30v, i b =0 BDW83B v ce =40v, i b =0 bdw83c v ce =50v, i b =0 i ceo collector cut-off current bdw83d v ce =60v, i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe-1 dc current gain i c =6a ; v ce =3v 750 20000 h fe-2 dc current gain i c =15a ; v ce =3v 100 v ec diode forward voltage i e =15a 3.5 v t on turn-on time 0.9 s t off turn-off time i c = 10 a, i b1 =-i b2 =40 ma r l =3 b ; v be(off) = -4.2v duty cycle c 2% 7.0 s thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.83 /w
savantic semiconductor product specification 3 silicon npn power transistors bdw83/83a/83b/83c/83d package outline fig.2 outline dimensions(unindicated tolerance: 0.1mm)
|
